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One-Time Programming (OTP) Memory with NAND Interface
Small Die Size, Improved Density, Performance, Reliability and Cost – Offers Unique Data Storage and Security Solutions
Over the past few years, the growth of NAND applications has been overwhelming and today NAND is conceived as the most appealing segment of the non-volatile memory industry. The market is constantly striving for an improved cost where Infinite-Memories has the most compelling solution.
Unique Technology & Reliability
Infinite Memories provides products for the content delivery market by combining novel system solutions, optimal One-Time-Program (OTP) technology and NAND interface. This technology is Quad NROM® based with unique OTP properties, demonstrating excellent lifetime retention and reliability performance that meets the market requirements.
128MB (1Gb) OTP Memory with NAND Interface
The 128MB OTP fully supports NAND interface and command set. The array is organized in pages of 1K bytes divided to two user chunks. All the OTP device operations are accomplished by applying commands to a Command User Interface (CUI). Fast data access is enabled through an on-chip data buffer of 1K bytes. The OTP device can be read or programmed on a per-page basis. Internal controller is embedded in the device managing the program and read algorithms, enabling additional unique solutions developed to accommodate special OTP device requirements.
Data Security
The One-Time Programming (OTP) technology sustain user data integrity and secures device content by preventing re-write or erase of the device blocks, unique device protect feature disables users from writing additional data after device is locked. This feature is widely used to protect customer’s data in a system so that it cannot be corrupted.
.Die size: 3.95 x 6.656 = 26.29mm2
.Density: 1Gbit (128Mbyte)
.Power Supply: 2.70V -3.60V
.Architecture
-Page size 1024 bytes
-x8 I/O Organization
.Page Buffer: (1024+32) bytes
.Page Read: (1024+32) bytes
.Page Program: (1024+32) bytes
.Page Read Latency: 115μS (typical) ~8MB/sec
.Page Program: 3.0mS (typical) ~0.3MB/sec
.I/O Cycle: 30ns
.Current Consumption:
-Read: 30mA (typical)
-Program: 30mA (typical)
-Stand-By: 50μA (Max)
.Reliability:
-Data Retention: 100Years @ 40°C
.Temperature:
-Read: -25°C to +85°C
-Program: Room temperature
-Storage: >-65°C, < 150°C / 90% RH
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